2N3904N Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
60
40
6
200
400
150
-55~150
2N3904N
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn on delay time
Rise time
Storage time
Fall Time
Symbol
BV_CEO
I_CEX
h_FE
V_CE(sat)
V_BE
f_T
C_ob
t_d
t_r
t_stg
t_f
Test Condition
I_C=1mA, I_B=0
V_CE=30V, V_EB=3V
V_CE=1V, I_C=10mA
I_C=50mA, I_B=5mA
V_CE=1V, I_C=10mA
V_CE=20V, I_C=10mA
V_CB=5V, I_E=0, f=1MHz
V_CC=3V, V_BE(off)=0.5V,
I_C=10mA, I_B1=1mA
V_CC=3V, I_C=10mA,
I_B1=I_B2=1mA
Min.
40
-
100
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.75
300
3
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
50
nA
300
-
0.3
V
1.0
V
-
MHz
-
pF
35
ns
35
ns
200
ns
50
ns
KSD-T0C036-000
2