TMF8901F Datasheet, PDF (1/5 Pages) AUK corp – Si RF LDMOS Transistor

Semiconductor
TMF8901F
Si RF LDMOS Transistor
□ Applications
- VHF and UHF wide band amplifier
SOT-89
Unit in mm
□ Features
- Power gain
G_P = 12.5 dB at V_DS = 4.5 V, I_Dset = 200 mA, f = 470 MHz
- Output power
P_OUT = 32 dBm at V_DS = 4.5 V, I_Dset = 200 mA, f = 470 MHz
- Drain efficiency
η_D = 60 % (typ.)
□ Marking
4
8901
123
4
Pin Configuration
1. Gate
2. Source
3. Drain
4. Source
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Sym bol
Ratings
Unit
V_DS
13.0
V
V_GS
4.0
V
I_D
1.2
A
P_tot
3
W
Tch
150
℃
T_stg
-65 ~ 150
℃