THN6501S Datasheet, PDF (1/15 Pages) Tachyonics CO,. LTD – NPN Planer RF TRANSISTOR

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, V_CE = 3 V, I_C = 7 mA
o High Power Gain
MAG = 15 dB at f = 1 GHz, V_CE = 3 V, I_C = 7 mA
o High Transition Frequency
f_T = 9 GHz at V_CE = 3 V, I_C = 30 mA
THN6501 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ h_FE Classification
Marking AB1
AB2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown Voltage
Ic Collector Current (DC)
PT Total Power Dissipation
TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : Electro Static Senetive Device
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN6501S SOT-23
THN6501U SOT-323
THN6501Z SOT-343
THN6501E SOT-523
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
Ratings
Unit
20
V
12
V
2.5
V
100
mA
150
mW
-65 ~ 150
℃
150
℃
1