THN6301S Datasheet, PDF (1/11 Pages) List of Unclassifed Manufacturers – NPN Planer RF TRANSISTOR

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure
NF = 1.1 dB at f = 1 GHz, V_CE = 8 V, I_C = 5 mA
o High Power Gain
MAG =18 dB at f = 1 GHz, V_CE = 8 V, I_C =15 mA
o High Transition Frequency
f_T = 10 GHz at V_CE = 8 V, I_C = 15 mA
THN6301 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ h_FE Classification
Marking AA1
AA2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown Voltage
Ic Collector Current (DC)
PT Total Power Dissipation
TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : ESD sensitive device
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN6301S SOT-23
THN6301U SOT-323
THN6301Z SOT-343
THN6301E SOT-523
THN6301KF SOT-623F
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Ratings
Unit
25
V
12
V
2.5
V
65
mA
150
mW
-65 ~ 150
℃
150
℃
1