THN4201U Datasheet, PDF (1/12 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure
NF = 1.5 dB at f = 2 GHz, V_CE = 3 V, I_C = 5 mA
NF = 1.7 dB at f = 2 GHz, V_CE = 1 V, I_C = 3 mA
o High Gain
MAG = 13.5 dB at f = 2 GHz, V_CE = 3 V, I_C = 20 mA
MAG = 13 dB at f = 2 GHz, V_CE = 1 V, I_C = 3 mA
o High Transition Frequency
f_T = 16.5 GHz at V_CE = 3 V, I_C = 20 mA
□ h_FE Classification
Marking AG1
AG2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown Voltage
Ic Collector Current (DC)
PT Total Power Dissipation
TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : ESD sensitive device
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN4201U SOT-323
THN4201Z SOT-343
THN4201E SOT-523
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
Ratings
Unit
15
V
6
V
2.5
V
35
mA
150
mW
-65 ~ 150
℃
150
℃
1