TBN6501U Datasheet, PDF (1/4 Pages) AUK corp – Si NPN Transistor

Semiconductor
□ Applications
- Broadband amplifier application under 1GHz
- SAW filter driver in TV tuners
□ Features
- Gain bandwidth product
f_T = 1.1 GHz at V_CE = 3 V, I_C = 20 mA
f_T = 1.5 GHz at V_CE = 5 V, I_C = 30 mA
- Power gain
|S₂₁|² = 3.0 dB at V_CE = 3 V, I_C = 10 mA, f = 1 GHz
- Noise figure
NF = 1.8 dB at V_CE = 3 V, I_C = 10 mA, f = 1 GHz
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Caution : Electro Static Discharge sensitive device
TBN6501U
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
1
3
2
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
Ratings
Unit
20
V
8
V
3
V
100
mA
200
mW
150
℃
-65 ~ 150
℃
1