TBN6301 Datasheet, PDF (1/6 Pages) Tachyonics CO,. LTD – NPN SILICON RF TRANSISTOR

Semiconductor
□ Applications
- VHF and UHF wide band amplifier
□ Features
- High gain bandwidth product
f_T = 6 GHz at V_CE = 3 V, I_C = 10 mA
f_T = 7.5 GHz at V_CE = 5 V, I_C = 20 mA
- High power gain
|S₂₁|² = 9 dB at V_CE = 3 V, I_C = 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB at V_CE = 3 V, I_C = 10 mA, f = 1 GHz
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Caution : Electro Static Discharge sensitive device
TBN6301 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
1
3
2
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
Ratings
Unit
20
V
8
V
3
V
75
mA
150
mW
150
℃
-65 ~ 150
℃
1