TBN4226 Datasheet, PDF (1/6 Pages) AUK corp – Si NPN Transistor

Semiconductor
□ Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
□ Features
- High gain bandwidth product
f_T = 6 GHz at V_CE = 3 V, I_C = 7 mA
f_T = 8 GHz at V_CE = 3 V, I_C = 30 mA
- High power gain
|S₂₁|² = 9.0 dB at V_CE = 3 V, I_C = 7 mA, f = 1 GHz
- Low noise figure
NF = 1.2 dB at V_CE = 3 V, I_C = 7 mA, f = 1 GHz
TBN4226 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
1
3
2
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Ratings
20
8
3
100
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution : Electro Static Discharge sensitive device
1