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STD123N Datasheet, PDF (1/3 Pages) AUK corp – Epitaxial planar NPN silicon transistor
Semiconductor
STD123N
Epitaxial planar NPN silicon transistor
Description
• High current application
Features
• Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : RON=0.6Ω(Max.) @ IB=1mA
Ordering Information
Type NO.
Marking
STD123N
STD123
Package Code
TO-92N
Outline Dimensions
unit : mm
4.20~4.40
2.25 Max.
0.52 Max.
0.90 Max.
1.27 Typ.
12 3
3.55 Typ
0.40 Max.
KSD-T0C004-001
PIN Connections
1. Emitter
2. Base
3. Collector
1