ATR4251_09 Datasheet, PDF (9/21 Pages) ATMEL Corporation – Low-noise, High-dynamic-range Antenna Amplifier IC

ATR4251
7. Electrical Characteristics (Continued)
See Test Circuit, Figure 8-1 on page 11; V_S = 10V, T_amb = 25°C, unless otherwise specified. Pin numbers in () are referred to the QFN
package.
No. Parameters
Test Conditions
Pin
Symbol Min.
Typ.
Max.
Unit Type*
3.9
Transconductance of
Level detector
ViHF = V_AMth at pin 10 (9)
10/12
(9/11)
I_{--A----M-----s--i-n----k-}
V_AMth
20
-----^µ----^A-------
mV_rms
C
3.10
IP3 at level detector
input
Figure 9-2 on page 13,
1 MHz and 1,1MHz,
120 dBµV
10 (9)
150
170
dBµV
D
3.11
PIN diode current
generation
d(20 log I_Pin-diode) / dU_Pin12
T = 25°C, U_Pin12 = 2V
30
dB/V
D
3.12 Output resistance
9 (8)
R_OUT
27
35
45
kΩ
D
4 FM Amplifier
4.1 Emitter voltage
1 (22)
1.85
1.95
2.05
V
A
4.2 Emitter voltage
T = –40°C to +85°C
1 (22)
1.8
2.0
2.2
V
C
4.3 Supply current limit
4.4
Maximum output
voltage
R_ε = 56Ω
V_S = 10V
19 (20)
I₁₉
19 (20)
12
37
mA
D
V_pp
D
4.5 Input resistance
f = 100 MHz
2 (23)
R_FMIN
50
4.6 Output resistance
f = 100 MHz
19 (20)
R_FMOUT
50
4.7 Power gain⁽²⁾
f = 100 MHz
FMOUT/
FMIN
G
5
Ω
D
Ω
D
dB
A
4.8
4.9
4.10
4.11
4.12
Output noise voltage
(emitter circuit)⁽²⁾
OIP3 (emitter circuit)⁽²⁾
Gain⁽³⁾
Noise figure⁽³⁾
OIP3⁽³⁾
f = 100 MHz,
B = 120 kHz
f = 98 + 99 MHz
f = 98 + 99 MHz
19 (20)
V_N
19 (20)
I_IP3
–5.1
dBµV
D
140
dBµV
C
6
dB
C
2.8
dB
C
148
dBµV
C
Parameters Dependent of External Components in Application Circuit: R_FMIN, R_FMOUT, G, V_N, IIP3
5 FM AGC
5.1 AGC threshold
f = 100 MHz
f = 900 MHz
18 (19)
V_th1,100
V_thl,900
81
81
83
85
85
dBµV
B
87
dBµV
B
5.2 AGC1 output voltage
AGC1 active,
V_{pin16 (16)} = 5V
5 (24)
V_AGC V_S – 2.1V V_S – 1.9V V_S – 1.7V V
C
5.3 AGC1 output voltage
AGC1 inactive,
V_{pin16 (16)} = 1.7V
5 (24)
V_AGC
V_S – 0.2V
V_S
V
C
5.4 AGC2 output voltage
AGC2 active,
V_pin16 (16) = 1.7V
6 (4)
V_AGC V_S – 2.1V V_S – 1.9V V_S – 1.7V V
C
5.5 AGC2 output voltage
AGC2 inactive,
V_pin16 (16) = 5V
6 (4)
V_AGC
V_S – 0.2V
V_S
V
C
5.6 Input resistance
18 (19)
R_Pin18
17
21
25
kΩ
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Leakage current of PIN diode can be adjusted by an external resistor between pin 11 and VS
2. Demo board measurements (see Figure 8-1 on page 11 “Common Emitter Configuration”)
3. Demo board measurements (see Figure 9-1 on page 12 “Common Base Configuration”)
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