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TH7814A Datasheet, PDF (7/10 Pages) ATMEL Corporation – 50 MHz 1024/2048 Linear CCDs
TH7813A/TH7814A
Static And Dynamic Electrical Characteristics
Parameter
Output Amplifier Supply Current
Output Impedance
DC Output Level
Output Conversion Factor
Offset in Darkness
Reset Feedthrough
Symbol
Min
IDD
ZS
200
VREF
CVF
DC off
Vft
Value
Typ
Max
10
225
259
10
5
30
400
Unit
mA
Ω
V
µV/e-
mV
mV
Remarks
per amplifier
Electro-optical
Performances
without Infrared Cut-
off Filter
The TH7813A and TH7814A special semiconductor process enables to exploit the sili-
con's high near infrared sensitivity while maintaining good imaging performances in
terms of response uniformity and resolution. Typical changes in performance with and
without IR filtering are summarized below:
Parameter
Average Video Signal Due to a Given Illumination
PRNU (Single Defects Excluded)
CTF at Nyquist Frequency
With IR Cut-off Filter
VOS
±5%
65%
Without IR Cut-off Filter
6 x VOS
5%
49%
Pixel Saturation
Adjustment
The TH7813A and TH7814A antiblooming structure can be used to adjust the maximum
saturation voltage, by adjusting the ΦA bias voltage. The following curve shows the rela-
tion between VSAT and VΦA.
Figure 7. Pixel Saturation vs. Antiblooming Bias (Typical Conditions)
Typical conditions
3
2
1
0
2
3
4
5
6
7
(V)
Antiblooming Bias
7
1990A–IMAGE–05/02