AT49BV160C Datasheet, PDF (24/30 Pages) ATMEL Corporation – 16-megabit (1M x 16) 3-volt Only Flash Memory

Program Cycle Characteristics
Symbol
t_BP
t_AS
t_AH
t_DS
t_DH
t_WP
t_WPH
t_WC
t_RP
t_SEC1
t_SEC2
t_ES
t_PS
Parameter
Word Programming Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Write Cycle Time
Reset Pulse Width
Sector Erase Cycle Time (4K Word Sectors)
Sector Erase Cycle Time (32K Word Sectors)
Erase Suspend Time
Program Suspend Time
Program Cycle Waveforms
OE
PROGRAM CYCLE
CE
WE
A0 - A19
DATA
t_WP
t_BP
t_AS
XX⁽¹⁾
t_WPH
t_DH
t_AH
ADDRESS
t_WC
Note 3
t_DS
INPUT DATA
Sector Erase Cycle Waveforms
OE ⁽²⁾
CE
WE
A0-A19
t_WP
t_WPH
t_DH
t_AS
t_AH
XX⁽¹⁾
SA⁽⁴⁾
t_WC
t_DS
DATA
20
WORD 0
D0
WORD 1
Notes:
1. Any address can be used to load the data.
2. OE must be high only when WE and CE are both low.
3. The data can be 40H or 10H.
4. The address depends on what sector is to be erased.
24 AT49BV160C(T)
Min
Typ
Max
Units
12
120
µs
45
ns
0
ns
45
ns
0
ns
40
ns
30
ns
70
ns
500
ns
0.3
3.0
seconds
0.8
6.0
seconds
15
µs
20
µs
t_EC
3367D–FLASH–5/04