AT16C16 Datasheet, PDF (2/12 Pages) ATMEL Corporation – 16K (2K x 8) Parallel EEPROMs

The AT28C16 is accessed like a static RAM for the read or
write cycles without the need of external components. Dur-
ing a byte write, the address and data are latched inter-
nally, freeing the microprocessor address and data bus for
other operations. Following the initiation of a write cycle,
the device will go to a busy state and automatically clear
and write the latched data using an internal control timer.
The end of a write cycle can be determined by DATA
POLLING of I/O_7. Once the end of a write cycle has been
detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 150 ns at
low power dissipation. When the chip is deselected the
standby current is less than 100 µA.
Atmel’s 28C16 has additional features to ensure high qual-
ity and manufacturability. The device utilizes error correc-
tion internally for extended endurance and for improved
data retention characteristics. An extra 32 bytes of
EEPROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V_CC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
2
AT28C16