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U3280M_07 Datasheet, PDF (15/21 Pages) ATMEL Corporation – Transponder Interface for Microcontroller
U3280M
6. Absolute Maximum Ratings
Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at any condition beyond those indicated in the operational section of these specification is not
implied. Exposure to absolute maximum rating conditions for an extended period may affect device reliability. All inputs and outputs are
protected against high electrostatic voltages or electric fields. However, precautions to minimize build-up of electrostatic charges during
handling are recommended. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (for
example, VDD).
Voltages are given relative to VSS
Parameter
Symbol
Value
Unit
Supply voltage
VDD, VBatt
0V to +7.0V with reverse protection
V
Maximum current out of VSS pin
ISS
15
mA
Maximum current into VBatt pin
IBatt
15
mA
Input voltage (on any pin)
VIN
VSS –0.6 ≤ VIN ≤ VDD +0.6
V
Input/output clamp current (VSS > Vi/Vo > VDD)
IIK/IOK
±15
mA
Min. ESD protection (100 pF through 1.5 kΩ)
±2
kV
Operating temperature range
Storage temperature range
Soldering temperature (t ≤ 10s)
Tamb
-40 to +85
°C
TSTG
-40 to +125
°C
TSD
260
°C
7. Thermal Resistance
Parameter
Junction ambient
Symbol
RthJA
Value
180
Unit
K/W
8. DC Characteristics
Supply voltage VDD = 1.8V to 6.5V, VSS = 0V, Tamb = –40°C to 85°C unless otherwise specified
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Power Supply
Operating voltage at VBatt
Operating voltage at VDD during
battery supply
VDD-limiter voltage during coil
supply
VBatt
2.0
6.5
V
VDDB
VBatt –
VSD
V
VDDC
2.6
2.9
3.2
V
Operating current during field
supply
VDD > 2.0V
IFi
40
80
µA
Sleep current
EEPROM
ISl
0.4
µA
Operating current during
VDD = 2.0V
IWR
erase/write cycle
VDD = 6.5V
IWR
VDD = 2.0V
IRdp
Operating current during read VDD = 6.5V
IRdp
cycle
Peak current during 1/4 of read
cycle
400
500
1200
µA
µA
300
µA
350
µA
15
4688D–RFID–03/07