M65609E Datasheet, PDF (1/14 Pages) ATMEL Corporation – Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Features
• Operating Voltage: 3.3V
• Access Time: 40 ns
• Very Low Power Consumption
– Active: 180 mW (Max)
– Standby: 70 µW (Typ)
• Wide Temperature Range: -55°C to +125°C
• 400 Mils Width Package
• TTL Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.35 Micron Process
• Latch-up Immune
• 200 Krads capability
• SEU LET Better Than 3 MeV
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current (Typical value = 20 µA) with a fast access time
at 40 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
It is produced on the same process as the MH1RT sea of gates series.
Rad. Hard
128K x 8
3.3-volt
Very Low Power
CMOS SRAM
M65609E
Rev. 4158D–AERO–06/02
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