 English |
|
|
|
|
|
|
|
| FMMTA63 Datasheet, PDF (1/1 Pages) ATMEL Corporation – SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS | |||
| |||
|
SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 2 Â MARCH 1995
7
PARTMARKING DETAIL Â
FMMTA63 - Z2U
FMMTA64 - Z2V
COMPLEMENTARY TYPES Â FMMTA63 - FMMTA13
FMMTA64 - FMMTA14
FMMTA63
FMMTA64
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Peak Base Current
IBM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL FMMTA63
FMMTA64
-30
V
-30
V
-10
V
-800
mA
-500
mA
-200
mA
330
mW
-55 to +150
°C
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -30
-30
V
IC=-10µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO -30
-30
V
IC=-10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -10
-10
V
IE=-10µA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
-0.1
-0.1 µA
VCB=-30V, IE=0
Emitter Cut-Off
IEBO
Current
-0.1
-0.1 µA
VCE=-10V
Static Forward
hFE
Current Transfer Ratio
Collector-Emitter
Saturation Voltage
VCE(sat)
5K
10K
10K
20K
-1.5
-1.5 V
IC=-10mA, VCE=5V*
IC=-100mA, VCE=5V*
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0
-2.0 V
IC=-100mA, IB=-0.1mA*
Transition
Frequency
fT
125
125
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FZTA63 datasheet.
IC=-50mA, VCE=-5V
f=20MHz
3 - 178
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese