ATR7035_05 Datasheet, PDF (1/3 Pages) ATMEL Corporation – 5.8 GHz WDCT Power Amplifier

Features
• Frequency Range 5 GHz to 6 GHz
• P_OUT Maximum 28 dBm
• Gain Typically 19 dB
• V_CC 3.0V to 3.9V
• Package: QFN16
• Current Consumption in Power Down Mode Typically ≤ 15 µA
Benefits
• Biasing Control Extends Battery Life Time
• Simple Input and Output Matching
• One Single Supply Voltage Required
Electrostatic sensitive device.
Observe precautions for handling.
5.8 GHz WDCT
Power Amplifier
ATR7035
Summary
1. Description
1.1 Process
The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) pro-
cess and provides excellent noise performance as well as good power-added
efficiency.
1.2 Circuitry
The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The
output stages were realized using an open-collector structure. The IC features 50-Ω
input matching. Power-up/down and output level are controlled at bias control pin 6
(V_CTL).
Figure 1-1.
Block Diagram
VCC1
15
VCC2
13
RFIN
3
ATR7035
Matching
RFOUT
11
RFOUT
10
Preliminary
Bias control
6
VCTL
16
VCC_CTL
Rev. 4577ES–DECT–10/05
Note: This is a summary document. A complete document
is available under NDA. For more information, please con-
tact your local Atmel sales office.