AT68166H Datasheet, PDF (1/15 Pages) ATMEL Corporation – Rad Hard 16 MegaBit 3.3V SRAM Multi-Chip Module

Features
• 16 Mbit SRAM Multi Chip Module
• Allows 32-, 16- or 8-bit access configuration
• Operating Voltage: 3.3V + 0.3V
• Access Time
– 20 ns
– 18 ns
• Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns ⁽¹⁾
– Standby: 13 mW (Typ)
• Military Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Die manufactured on Atmel 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²@125°C
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• ESD better than 4000V
• Quality Grades:
– QML-Q or V
– ESCC
• 950 Mils Wide MQFPT68 Package
• Mass : 8.5 grams
Note: 1. Only for AT68166H-18. 450mW for AT68166H-20.
Rad Hard
16 MegaBit 3.3V
SRAM Multi-
Chip Module
AT68166H
Description
The AT68166H is a 16Mbit SRAM packaged in a hermetic Multi Chip Module
(MCM) for space applications.
The AT68166H MCM incorporates four 4Mbit AT60142H SRAM dice. It can be orga-
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166H memory.
The AT68166H is powered at 3.3V.
The AT68166H is processed according to the test methods of the latest revision of the
MIL-PRF-38535 or the ESCC 9000.
7842A–AERO–10/09