AT68166F Datasheet, PDF (1/17 Pages) ATMEL Corporation – Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module

Features
• 16 Mbit SRAM Multi Chip Module
• Allows 32-, 16- or 8-bit access configuration
• Operating Voltage: 3.3V + 0.3V
• Access Time
– 20 ns, 18 ns for AT68166F
– <18 ns for AT68166G (in development prototypes in Q4 2007)
• Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns ⁽¹⁾
– Standby: 13 mW (Typ)
• Military Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Die manufactured on Atmel 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• ESD Better than 4000V
• Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
• 950 Mils Wide MQFP 68 Package
• Mass : 8.5 grams
Note: 1. Only for AT68166F-18. 450mW for AT68166F-20.
Description
The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module
(MCM) for space applications.
The AT68166F/G MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be
organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of
512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a
Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access
time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166F/G memory.
The AT68166F/G is powered at 3.3V.
The AT68166F/G is processed according to the test methods of the latest revision of
the MIL-PRF-38535 or the ESCC 9000.
Rad Hard
16 MegaBit
3.3V
SRAM Multi-
Chip Module
AT68166F
AT68166G
7747A–AERO–07/07