AT61162E Datasheet, PDF (1/14 Pages) ATMEL Corporation – Rad Hard 2-Mbit x 8 SRAM Cube

Features
• Organized as 2M x 8 bits
• Single 3.3V Power Supply
• Stacks of 16 SRAM 128K x 865609E Die
• Access Time: 40 ns
• Very Low Power Consumption
– Active: 100 mW (Typ)
– Standby: 1 mW (Typ)
• TTL-Compatible Inputs and Outputs
• Die Designed on 0.35 Micron Process
• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm²
• Tested up to a Total Dose of 200 krads (Si) according to MIL STD 883 Method 1019
• Wide Temperature Range 55°C to +125°C
• Built and Tested by 3D+, using 3D+ Die Stacking Technology
Description
The AT61162E is a Rad Tolerant module, highly-integrated and very low-power
CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit.
Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are
selectable by pairs with 8 specific BS: 0 - 7.
This module takes full benefit of the 3D+ cube technology, and it is assembled and
tested by 3D+, using Atmel 65609E 1-Mbit SRAM die: it is built with 8 layers, each one
housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die.
This module brings the solution to applications where fast computing is as mandatory
as low power consumption, for example: space electronics, portable instruments, or
embarked systems.
AT61162E is processed according to the methods of the latest revision of the MIL
PRF 38535, QML N (QML Q counterpart for plastic).
The package is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm
height and 0.8 mm pin pitch.
Rad Hard
2-Mbit x 8
SRAM Cube
AT61162E
Preliminary
Rev. 4157D–AERO–06/04
1