AT60142H Datasheet, PDF (1/12 Pages) ATMEL Corporation – Rad Hard 512K x 8 Very Low Power CMOS SRAM

Features
• Operating Voltage: 3.3V
• Access Time:
– 15 ns
• Very Low Power Consumption
– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²@125°C
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD better than 4000V
• Quality Grades:
– QML-Q or V
– ESCC
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
Description
The AT60142H is a very low power CMOS static RAM organized as 524 288 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142H combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns or better over the full military temperature range. The high stability of the 6T cell
provides excellent protection against soft errors due to noise.
AT60142H
The AT60142H is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
7834A–AERO–10/09
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