AT60142FT_09 Datasheet, PDF (1/13 Pages) ATMEL Corporation – Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM

Features
• Operating Voltage: 3.3V, 5V tolerant
• Access Time:
– 17 ns
– 15 ns
• Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns⁽¹⁾, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 2000V
• Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
Note: 1. 650 mW (Max) @ 15 ns
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
Rev. 7726B–AERO–04/09
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