AT60142F Datasheet, PDF (1/13 Pages) ATMEL Corporation – Rad Hard 512K x 8 Very Low Power CMOS SRAM

Features
• Operating Voltage: 3.3V
• Access Time:
– 15 ns for 3.3V biased only (AT60142F)
– 17 ns for 5V Tolerant (AT60142FT)
• Very Low Power Consumption
– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
– Standby: 3.5 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V for the AT60142F
• ESD Better than 2000V for the AT60142FT
• Quality Grades: ESCC, QML-Q or V with smd 5962-05208
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
Description
The AT60142F/FT are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142F/FT combine an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The F version is biased at 3.3 V and is not 5V tolerant: it is available to 15 ns
specification.
The FT version is a variant allowing for 5V tolerance: it is available in 17 ns
specification.
The AT60142F/FT are processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
AT60142F
AT60142FT
Rev. 4408A–AERO–02/05
1