AT52BR1664AT Datasheet, PDF (1/35 Pages) ATMEL Corporation – 16-megabit Flash + 4-megabit SRAM Stack Memory

Features
• 16-Mbit (x16) Flash and 4-megabit SRAM
• 2.7V to 3.3V Operating Voltage
• Low Operating Power
– 40 mA Operating Current (Maximum)
– 35 µA Standby Current (Maximum)
• Industrial Temperature Range
Flash
• 2.7V to 3.3V Read/Write
• Access Time – 70 ns, 90 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 µs
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 12 mA Active
– 13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• Top/Bottom Boot Block Configuration
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
SRAM
• 4-megabit (256K x 16)
• 2.7V to 3.3V V_CC Operating Voltage
• 70 ns Access Time
• Fully Static Operation and Tri-state Output
• 1.2V (Min) Data Retention
Device Number
AT52BR1664A(T)
Flash Configuration
16M (1M x 16)
SRAM Configuration
4M (256K x 16)
16-megabit
Flash +
4-megabit
SRAM Stack
Memory
AT52BR1664A
AT52BR1664AT
Rev. 3361C–STKD–1/04
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