AT52BC1661A Datasheet, PDF (1/34 Pages) ATMEL Corporation – 16-Mbit Flash 8-Mbit PSRAM Stack Memory

Features
• 16-Mbit (x16) Flash and 8-Mbit PSRAM
• 2.7V to 3.3V Operating Voltage
• Low Operating Power
– 27 mA Operating Current
– 53 µA Standby Current
• Extended Temperature Range
Flash
• 2.7V to 3.3V Read/Write
• Access Time – 70 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 µs
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 12 mA Active
– 13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• Top/Bottom Boot Block Configuration
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
PSRAM
• 8-Mbit (512K x 16)
• 2.7V to 3.3V V_CC Operating Voltage
• 70 ns Access Time
• Fully Static Operation and Tri-state Output
• ISB0 < 10 µA when Deep Power-Down
Device Number
AT52BC1661A(T)
Flash Configuration
16M (1M x 16)
PSRAM Configuration
8M (512K x 16)
16-Mbit Flash +
8-Mbit PSRAM
Stack Memory
AT52BC1661A
AT52BC1661AT
Preliminary
Rev. 3455A–STKD–11/04
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