AT49SV163D Datasheet, PDF (1/30 Pages) ATMEL Corporation – 16-megabit 1M x 16) 1.8-volt Only Flash Memory

Features
• Single Voltage Read/Write Operation: 1.65V to 1.95V
• Access Time – 80 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 10 µs
• Fast Sector Erase Time – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word in the Non-suspending Sectors by Suspending
Programming of Any Other Word
• Low-power Operation
– 10 mA Active
– 15 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program Operation
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)
16-megabit
(1M x 16)
1.8-volt Only
Flash Memory
AT49SV163D
AT49SV163DT
1. Description
The AT49SV163D(T) is a 1.8-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each. The memory is divided into 39 sectors for erase operations.
The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device
has CE and OE control signals to avoid any bus contention. This device can be read
or reprogrammed using a single power supply, making it ideally suited for in-system
programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” on page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
The VPP pin provides data protection. When the V_PP input is below 0.4V, the program
and erase functions are inhibited. When V_PP is at 1.65V or above, normal program
and erase operations can be performed. With V_PP at 10.0V, the program (Dual-word
Program command) operation is accelerated.
3656A–FLASH–2/07