AT49F010 Datasheet, PDF (1/10 Pages) ATMEL Corporation – 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory

Features
• Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 45 ns
• _{Internal Program Control and Timer}
• _{8K bytes Boot Block With Lockout}
• _{Fast Erase Cycle Time - 10 seconds}
•• _{Byte By Byte Programming - 10 µs/Byte}
Hardware Data Protection
• _{DATA Polling For End Of Program Detection}
•• _{Low Power Dissipation}
- 30 mA Active Current
- 100 µA CMOS Standby Current
• ^{Typical 10,000 Write Cycles}
Description
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash
Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-
cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-
quire high input voltages for programming. Five-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-
formed by erasing the entire 1 megabit of memory and then programming on a byte
by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle
can be optionally detected by the DATA polling feature. Once the end of a byte pro-
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
DIP Top View
(continued)
1-Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
AT49F010
AT49HF010
AT49F010/HF010
PLCC Top View
TSOP Top View
Type 1
0852AX–5/97