AT49BV6416C Datasheet, PDF (1/32 Pages) ATMEL Corporation – 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory

Features
• 64-megabit (4M x 16) Flash Memory
• 2.7V - 3.6V Read/Write
• High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
• Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
• Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
• Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not
Being Programmed/Erased
– Memory Plane A: 16M Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M Memory Consisting of 32K Word Sectors
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 30 mA Active
– 35 µA Standby
• 2.2V I/O Option Reduces Overall System Power
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• Reset Input for Device Initialization
• CBGA Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Common Flash Interface (CFI)
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416C
AT49BV6416CT
1. Description
The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for In-System
programming. The device can operate in the asynchronous or page read mode.
The AT49BV6416C(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane.
The VPP pin provides data protection and faster programming times. When the V_PP
input is below 0.7V, the program and erase functions are inhibited. When V_PP is at
1.65V or above, normal program and erase operations can be performed. With V_PP at
10.0V, the program (Dual-word Program command) operation is accelerated.
3465C–FLASH–07/05