AT49BV640D Datasheet, PDF (1/31 Pages) ATMEL Corporation – 64-megabit (4M x 16) 3-volt Only Flash Memory

Features
• Single Voltage Operation Read/Write: 2.65V - 3.6V
• Access Time – 70 ns
• Sector Erase Architecture
– One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with
Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 10 µs
• Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending
Erase of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 10 mA Active
– 15 µA Standby
• VPP Pin for Write Protection and Accelerated Program Operation
• WP Pin for Sector Protection
• RESET Input for Device Initialization
• Flexible Sector Protection
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)
• Green (Pb/Halide-free/RoHS Compliant) Packaging
64-megabit
(4M x 16)
3-volt Only
Flash Memory
AT49BV640D
AT49BV640DT
1. Description
The AT49BV640D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device is offered in a 48-ball CBGA package. The device has CE and OE control
signals to avoid any bus contention. This device can be read or reprogrammed using
a single power supply, making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place
the device in other operation modes such as program and erase. The device has
the capability to protect the data in any sector (see “Flexible Sector Protection” on
page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory.
The VPP pin provides data protection. When the V_PP input is below 0.4V, the program
and erase functions are inhibited. When V_PP is at 1.65V or above, normal program
and erase operations can be performed. With V_PP at 10.0V, the program (Dual-word
Program command) operation is accelerated.
3608C–FLASH–11/06