AT49BV4096 Datasheet, PDF (1/11 Pages) ATMEL Corporation – 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Features
• Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
Fast Read Access Time - 120 ns
• _{Internal Erase/Program Control}
•• _{Sector Architecture}
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
•• Word-By-Word Programming - 10 µs/Word
Hardware Data Protection
• _{DATA Polling For End Of Program Detection}
•• _{Low Power Dissipation}
- 25 mA Active Current
- 50 µA CMOS Standby Current
• ^{Typical 10,000 Write Cycles}
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
Pin Configurations
(continued)
Pin Name
A0 - A17
CE
OE
WE
RESET
VPP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase
Power Supply
Data
Inputs/Outputs
No Connect
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
WE ^NC
RESET
VPP _NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
14 ¹³
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
VCC ^I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
SOIC (SOP)
VPP 1
NC 2
A17 3
A7 4
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
CE 12
GND 13
OE 14
I/O0 15
I/O8 16
I/O1 17
I/O9 18
I/O2 19
I/O10 20
I/O3 21
I/O11 22
44 RESET
43 WE
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 NC
32 GND
31 I/O15
30 I/O7
29 I/O14
28 I/O6
27 I/O13
26 I/O5
25 I/O12
24 I/O4
23 VCC
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
AT49BV4096/LV4096
0874A–5/97