AT49BV322A Datasheet, PDF (1/31 Pages) ATMEL Corporation – 32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Access Time – 70 ns
• Sector Erase Architecture
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 µs
• Fast Sector Erase Time – 300 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
• Low-power Operation
– 12 mA Active
– 13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322A
AT49BV322AT
Description
The AT49BV322A(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for
erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA pack-
age. The device has CE and OE control signals to avoid any bus contention. This
device can be read or reprogrammed using a single power supply, making it ideally
suited for in-system programming.
Pin Configurations
Pin Name
A0 - A20
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Write Protection
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
3308H–FLASH–5/04
1