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AT49BV16X4 Datasheet, PDF (1/18 Pages) ATMEL Corporation – 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory | |||
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Features
⢠2.7V to 3.3V Read/Write
⢠Access Time - 90 ns
⢠Sector Erase Architecture
â Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
â Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
â Two 16K Word (32K Byte) Sectors with Individual Write Lockout
⢠Fast Word Program Time - 20 µs
⢠Fast Sector Erase Time - 200 ms
⢠Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
⢠Erase Suspend Capability
â Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
⢠Low-power Operation
â 25 mA Active
â 10 µA Standby
⢠Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
⢠Optional VPP Pin for Fast Programming
⢠RESET Input for Device Initialization
⢠Sector Program Unlock Command
⢠TSOP, CBGA, and µBGA Package Options
⢠Top or Bottom Boot Block Configuration Available
Description
The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball
µBGA packages. The device has CE, and OE control signals to avoid any bus
(continued)
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
VCCQ
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Optional Power Supply for Faster
Program/Erase Operations
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Output Power Supply
Donât Connect
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604
AT49BV1604T
AT49BV1614
AT49BV1614T
Rev. 0925Hâ08/99
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