AT49BV040 Datasheet, PDF (1/12 Pages) ATMEL Corporation – 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Chip Erase Cycle Time - 10 seconds
• Byte-by-Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
– 8 x 8 mm CBGA
– 8 x 14 mm V-TSOP
Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech-
nology, the devices offer access times to 120 ns with power dissipation of just 90 mW
over the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
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Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
PLCC Top View
CBGA Top View
1234567
A
GND I/O6 VCC VCC I/O2 OE GND
B
A17 I/O7 I/O4 NC NC I/O0 CE
C
A10 NC I/O5 NC I/O3 I/O1 A0
D
A14 A13 A9 NC NC A6 A3
E
A16 A11 WE NC A7 A4 A1
F
A15 A12 A8 NC A18 A5 A2
V - TSOP Top View (8 x 14 mm) or
T - TSOP Top View (8 x 20 mm)
4-Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage^™
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
AT49BV/LV040
0679AX-A–9/97
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