AT49BV010 Datasheet, PDF (1/11 Pages) ATMEL Corporation – 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

AT49(H)BV/(H)LV01
Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Fast Read Access Time - 55 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µs/Byte typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end
of a byte program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
Pin Configurations
(continued)
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A11 1
A9 2
A8 3
A13 4
A14 5
NC 6
WE 7
VCC 8
NC 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage^™
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
0677B-A–9/97
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