AT49BV-LV040 Datasheet, PDF (1/13 Pages) ATMEL Corporation – 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time – 70 ns
• Internal Program Control and Timer
• 16K Bytes Boot Block with Lockout
• Fast Chip Erase Cycle Time – 10 seconds
• Byte-by-byte Programming – 30 µs/Byte Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
– 8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol-
ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over
the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. The
AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”).
(continued)
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage^™
Flash Memory
AT49BV040
AT49LV040
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
VCC 8
A18 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Rev. 0679D–03/01
1