AT29LV512 Datasheet, PDF (1/10 Pages) ATMEL Corporation – 512K 64K x 8 3-volt Only CMOS Flash Memory

AT29LV512
Features
Single Supply Voltage, Range 3V to 3.6V
• _{3-Volt-Only Read and Write Operation}
• _{Software Protected Programming}
•• _{Low Power Dissipation}
15 mA Active Current
20 µA CMOS Standby Current
Fast Read Access Time - 200 ns
•• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
• _{Internal Program Control and Timer}
• _{DATA Polling for End of Program Detection}
• _{Typical Endurance > 10,000 Cycles}
• _{CMOS and TTL Compatible Inputs and Outputs}
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 20 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
512K (64K x 8)
3-volt Only
CMOS Flash
Memory
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
PLCC Top View
AT29LV512
TSOP Top View
Type 1
0177I
4-43