AT29LV256 Datasheet, PDF (1/10 Pages) ATMEL Corporation – 256K 32K x 8 3-volt Only CMOS Flash Memory

AT29LV256
Features
Single Supply Voltage, Range 3V to 3.6V
• _{3-Volt-Only Read and Write Operation}
• _{Software Protected Programming}
•• _{Low Power Dissipation}
15 mA Active Current
20 µA CMOS Standby Current
Fast Read Access Time - 200 ns
•• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (64 bytes/sector)
Internal Address and Data Latches for 64-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
• _{Internal Program Control and Timer}
• _{DATA Polling for End of Program Detection}
• _{Typical Endurance > 10,000 Cycles}
• _{CMOS and TTL Compatible Inputs and Outputs}
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW over the commercial
temperature range. When the device is deselected, the CMOS standby current is less
than 20 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
256K (32K x 8)
3-volt Only
CMOS Flash
Memory
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PLCC Top View
AT29LV256
TSOP Top View
Type 1
0563A
4-33