AT29LV1024 Datasheet, PDF (1/12 Pages) ATMEL Corporation – 1 Megabit 64K x 16 3-volt Only CMOS Flash Memory

Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-Volt Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 150 ns
• Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 words/sector)
– Internal Address and Data Latches for 128 Words
• Fast Sector Program Cycle Time - 20 ms
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV1024 is a 3-volt only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 150 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 50 µA. The device endurance is
(continued)
Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O15
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC Top View
I/O12 7
I/O11 8
I/O10 9
I/O9 10
I/O8 11
GND 12
NC 13
I/O7 14
I/O6 15
I/O5 16
I/O4 17
39 A13
38 A12
37 A11
36 A10
35 A9
34 GND
33 NC
32 A8
31 A7
30 A6
29 A5
TSOP Top View
Type 1
NC 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
NC 8
A6 9
A7 10
A8 11
VSS 12
A9 13
A10 14
A11 15
NC 16
A12 17
A13 18
A14 19
A15 20
NC 21
WE 22
VCC 23
NC 24
48 NC
47 OE
46 O0
45 O1
44 O2
43 O3
42 O4
41 NC
40 O5
39 O6
38 O7
37 VSS
36 O8
35 O9
34 O10
33 NC
32 O11
31 O12
30 O13
29 O14
28 O15
27 CE
26 NC
25 NC
1-Megabit
(64K x 16)
3-volt Only
Flash Memory
AT29LV1024
Rev. 0564A–10/98
1