AT29LV020 Datasheet, PDF (1/10 Pages) ATMEL Corporation – 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory

AT29LV020
Features
Single Voltage, Range 3V to 3.6V Supply
• _{3-Volt-Only Read and Write Operation}
• _{Software Protected Programming}
• _{Fast Read Access Time - 200 ns}
•• _{Low Power Dissipation}
15 mA Active Current
20 µA CMOS Standby Current
• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
• _{Fast Sector Program Cycle Time - 20 ms}
• _{Internal Program Control and Timer}
• _{DATA Polling for End of Program Detection}
• _{Typical Endurance > 10,000 Cycles}
• _{CMOS and TTL Compatible Inputs and Outputs}
•• _{Commercial and Industrial Temperature Ranges}
2 Megabit
(256K x 8)
3-volt Only
CMOS Flash
Memory
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 54 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 20 µA. The device endurance is such that any sector can typically be written
to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV020 does not require
high input voltages for programming. Five-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
Pin Configurations
(continued)
Pin Name Function
A0 - A17 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
AT29LV020
PLCC Top View
TSOP Top View
Type 1
0565A
4-73