AT29C432 Datasheet, PDF (1/11 Pages) ATMEL Corporation – 4 Megabit 5-volt Flash with 256K E2PROM Memory

Features
• ConcurrentFlash™ Memory
Unique Architecture Allows the Flash Array
To Be Read During the E²PROM Write Cycle
• 4 Megabit 5-volt Flash
Configured as a 512K x 8 Memory Array
120 ns Read Access Time
Sector Program Operation
Single Cycle Reprogram (No Erase Necessary)
2048 Sectors, 256-Bytes Wide
10 ms Sector Rewrite
JEDEC Standard Software Data Protection
• 256K bit Full Feature E2PROM
Configured as a 32K x 8 Memory Array
Byte or Page (16 bytes) Write Capability
Write Cycle Time: 10 ms
JEDEC Standard Software Data Protection
Pinout Similar to 32-Pin 4 Mb Flash
•• _{Data Memory Endurance: 10,000 cycles}
Description
The AT29C432 is a CMOS memory specifically designed for applications requiring
both a high density nonvolatile program memory and a smaller nonvolatile data mem-
ory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated
with a 256K bit full featured E²PROM array on the same device. A unique feature of
this device is its concurrent read while writing capability. This provides the host sys-
tem read access to the Flash program memory during the write cycle time of the
E²PROM.
The two memory arrays share all I/O lines, Address lines and OE and WE inputs.
Each memory array has its own Chip Enable input: CEF for the Flash array and CEE
for the E²PROM array.
Additionally, Software Data Protection has been independently implemented for both
arrays and is always enabled. The AT29C432 has a pinout similar to the AT29C040A
Flash memory. A system designer using a Flash memory for program storage and
another smaller, non volatile memory for data storage can easily replace both memo-
ries with the AT29C432.
4 Megabit
5-volt Flash with
256K E²PROM
Memory
AT29C432
ConcurrentFlash^™
Preliminary
Pin Configurations
Pin Name Function
A0 - A18 Addresses
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
CEE
Chip Enable E²PROM
CEF
Chip Enable Flash
NC
No Connect
TSOP
Type 1