AT29C010A_02 Datasheet, PDF (1/18 Pages) ATMEL Corporation – 1-Megabit (128K x 8) 5-volt Only Flash Memory

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (128 Bytes/sector)
– Internal Address and Data Latches for 128 Bytes
• Two 8K Bytes Boot Blocks with Lockout
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT29C010A
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
A11 1
A9 2
A8 3
A13 4
A14 5
NC 6
WE 7
VCC 8
NC 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
DIP Top View
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Rev. 0394E–FLASH–11/02
1