AT29C010A Datasheet, PDF (1/12 Pages) ATMEL Corporation – 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory

AT29C010A
Features
Fast Read Access Time - 70 ns
• _{5-Volt-Only Reprogramming}
•• _{Sector Program Operation}
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Two 8 KB Boot Blocks with Lockout
• _{Internal Program Control and Timer}
• _{Hardware and Software Data Protection}
• _{Fast Sector Program Cycle Time - 10 ms}
• _{DATA Polling for End of Program Detection}
•• _{Low Power Dissipation}
50 mA Active Current
100 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
•• Single 5V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
•• _{Commercial and Industrial Temperature Ranges}
1 Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 100 µA. The device endurance is such that any sector can typically be writ-
ten to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C010A does not require
high input voltages for programming. Five-volt-only commands determine the opera-
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
DIP Top View
(continued)
AT29C010A
PLCC Top View
TSOP Top View
Type 1
0394B
4-129