AT29BV040A Datasheet, PDF (1/14 Pages) ATMEL Corporation – 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time – 200 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
• Two 16K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Minimum Endurance 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 200 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 µA. The device
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage^™
Flash Memory
AT29BV040A
TSOP Top View
Type 1
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
VCC 8
A18 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Rev. 0383G–FLASH–5/03
1