AT29BV020 Datasheet, PDF (1/10 Pages) ATMEL Corporation – 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

AT29BV020
Features
Single Supply Voltage, Range 2.7V to 3.6V
• _{Single Supply for Read and Write}
• _{Software Protected Programming}
• _{Fast Read Access Time - 250 ns}
•• _{Low Power Dissipation}
15 mA Active Current
20 µA CMOS Standby Current
• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
• _{Fast Sector Program Cycle Time - 20 ms Max.}
• _{Internal Program Control and Timer}
• _{DATA Polling for End of Program Detection}
• _{Typical Endurance > 10,000 Cycles}
• _{CMOS and TTL Compatible Inputs and Outputs}
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
(continued)
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage^™
CMOS Flash
Memory
AT29BV020
TSOP Top View
Type 1
PLCC Top View
0402B
4-13