AT28LV64B Datasheet, PDF (1/9 Pages) ATMEL Corporation – 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

AT28LV64B
Features
• Single 3.3V ± 10% Supply
3-Volt-Only Read and Write Operation
• _{Software-Protected Programming}
•• _{Low Power Dissipation}
15 mA Active Current
20 µA CMOS Standby Current
• ^{Fast Read Access Time − 200 ns}
• ^{Automatic Page Write Operation}
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
• Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
DATA Polling for End of Write Detection
•• High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-
lected, the CMOS standby current is less than 20 µA.
The AT28LV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
Pin Configurations
(continued)
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PDIP, SOIC
Top View
64K (8K x 8)
Low Voltage
CMOS
E²PROM with
Page Write and
Software Data
Protection
AT28LV64B
PLCC
Top View
TSOP
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0299C
2-135