AT28LV010 Datasheet, PDF (1/9 Pages) ATMEL Corporation – 1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM

AT28LV010
Features
• Single 3.3V ± 10% Supply
Fast Read Access Time - 200 ns
•• Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
• Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Hardware and Software Data Protection
• _{DATA Polling for End of Write Detection}
•• _{High Reliability CMOS Technology}
Endurance: 100,000K Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-
mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
device offers access times to 200 ns with power dissipation of just 54 mW. When the
device is deselected, the CMOS standby current is less than 20 µA.
Pin Configurations
(continued)
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data
Inputs/Outputs
No Connect
Don’t Connect
PDIP
Top View
1 Megabit
(128K x 8)
Low Voltage
Paged CMOS
E²PROM
AT28LV010
PLCC
Top View
TSOP
Top View
0395A
2-155