AT28HC64B Datasheet, PDF (1/12 Pages) ATMEL Corporation – 64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

AT28HC64B
Features
Fast Read Access Time - 55 ns
•• Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
• Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
• Low Power Dissipation
40 mA Active Current
100 µA CMOS Standby Current
Hardware and Software Data Protection
• _{DATA Polling and Toggle Bit for End of Write Detection}
•• _{High Reliability CMOS Technology}
Endurance: 100,000 Cycles
Data Retention: 10 Years
• Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
• _{JEDEC Approved Byte-Wide Pinout}
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT28HC64B is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
Pin Configurations
(continued)
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
TSOP
Top View
PDIP, SOIC
Top View
PLCC
Top View
64K (8K x 8)
High Speed
CMOS
E²PROM with
Page Write and
Software Data
Protection
AT28HC64B
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0274D
2-267