AT28HC256 Datasheet, PDF (1/12 Pages) ATMEL Corporation – 256 32K x 8 High Speed Parallel EEPROMs

AT28HC256
Features
Fast Read Access Time - 70 ns
•• Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
• Fast Write Cycle Times
Page Write Cycle Time: 3 ms or 10 ms Maximum
1 to 64-Byte Page Write Operation
• Low Power Dissipation
80 mA Active Current
3 mA Standby Current
Hardware and Software Data Protection
• _{DATA Polling for End of Write Detection}
•• _{High Reliability CMOS Technology}
Endurance: 10⁴ or 10⁵ Cycles
Data Retention: 10 Years
• Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
• _{JEDEC Approved Byte-Wide Pinout}
•• _{Full Military, Commercial, and Industrial Temperature Ranges}
256 (32K x 8)
High Speed
CMOS
E²PROM
Description
The AT28HC256 is a high-performance Electrically Erasable and Programmable
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256
offers access times to 70 ns with power dissipation of just 440 mW. When the
AT28HC256 is deselected, the standby current is less than 5 mA.
Pin Configurations
(continued)
Pin Name
A0 - A14
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
TSOP
Top View
AT28HC256
PGA
Top View
CERDIP, PDIP,
FLATPACK
Top View
LCC, PLCC
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0007F
2-279