AT28C64_14 Datasheet, PDF (1/12 Pages) ATMEL Corporation – Fast Read Access Time

Features
• Fast Read Access Time – 120 ns
• Fast Byte Write – 200 µs or 1 ms
• Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
• Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
• Low Power
– 30 mA Active Current
– 100 µA CMOS Standby Current
• High Reliability
– Endurance: 10⁴ or 10⁵ Cycles
– Data Retention: 10 Years
• 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-
trically erasable and programmable read only memory with popular, easy-to-use fea-
tures. The device is manufactured with Atmel’s reliable nonvolatile technology.
(continued)
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
Don’t Connect
TSOP
Top View
PDIP, SOIC
Top View
RDY/BUSY (or NC) 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
LCC, PLCC
Top View
64K (8K x 8)
Parallel
EEPROMs
AT28C64
AT28C64X
OE 1
A11 2
A9 3
A8 4
NC 5
WE 6
VCC 7
RDY/BUSY (or NC) 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
Rev. 0001H–12/99
1