AT28C64B Datasheet, PDF (1/13 Pages) ATMEL Corporation – 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Features
• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
(continued)
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
OE 1
A11 2
A9 3
A8 4
NC 5
WE 6
VCC 7
NC 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
PDIP, SOIC
Top View
NC 1
28
A12 2
27
A7 3
26
A6 4
25
A5 5
24
A4 6
23
A3 7
22
A2 8
21
A1 9
20
A0 10
19
I/O0 11
18
I/O1 12
17
I/O2 13
16
GND 14
15
TSOP
Top View
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Rev. 0270H–12/99
1